Global 3D NAND Flash Memory Market Overview:
3D NAND is developed to overcome 2D NAND’s capacity limitations. It scales to higher densities without sacrificing data integrity. This market has a high demand in enterprises for the replacement of hard disk drives by providing higher storage capacity. The use of TSV technology providing high data rates for low latency. The 3D NAND is moving to the quad-level cell, which is the next step in cell storage density, as a step towards a denser storage system. The technology is a type of flash storage that uses a layered design to increase its maximum chip capacity.
Attributes | Details |
---|
Study Period | 2018-2028 |
Base Year | 2022 |
Forecast Period | 2023-2028 |
Historical Period | 2018-2022 |
Unit | Value (USD Million) |
Customization Scope | Avail customization with purchase of this report. Add or modify country, region & or narrow down segments in the final scope subject to feasibility |
Influencing Trend:
Increase Demand for Smaller Memory Chips, Due Advancement in Electronic Products
Market Growth Drivers:
Increase Demand for Cloud Connected Devices, Increase In Demand for Data Storage across Consumer Electronics and Enterprise Storage Sectors and High Incorporations Internet of Things in Multiple Applications
Challenges:
3D NAND Needs More Silicon and Shortages and Supply Chain Issues
Restraints:
High and Complex Manufacturing Cost Is Become the Barrier for This Market
Opportunities:
High Potential Growth in This Market by Providing Higher Capacity of Storage and Improved Power Efficiency for Increasing Demand in Consumer Electronics
Competitive Landscape:
In This Market Players Are Focusing Technology Advancement In Their Offerings Such Involving Artificial Intelligence To Boost Their Productivity Of Products. And Also Working On Layers Developments To Increase The Storage Capacity, Which Helps To Improve Their Market Reach.
Some of the key players profiled in the report are Samsung Electronics Co. (South Korea), Toshiba Corporation (Japan), SK Hynix Semiconductor (South Korea), Micron Technology (United States), Intel Corporation (United States), Apple Inc. (United States), Lenovo Group Ltd. (Hong Kong), Advanced Micro Devices (United States), STMicroelectronics (Switzerland) and SanDisk Corporation (United States). Additionally, following companies can also be profiled that are part of our coverage like Pure Storage (United States). Analyst at AMA Research see Asia Pacific, United States Players to retain maximum share of Global 3D NAND Flash Memory market by 2028. Considering Market by Verticals, the sub-segment i.e. Automotive will boost the 3D NAND Flash Memory market.
Latest Market Insights:
In January 2019, Micron Exercises Call Option to Acquire Remaining Interest in IM Flash Technologies Joint Venture IM Flash Technologies, LLC.
In Jan 2019, Samsung Announced Its New 96-Layer 3D NAND Flash Memory in the Form of the 970 EVO Plus. It Is Updated Version Of Samsung 970 EVO And Having New NAND Chips. It Is Available In Capacities Of 250 GB, 500 GB, TB And 2 TB. Additionally, In 2019 Only Toshiba Announced The Starting Of Construction Of Its New BICs 3D NAND Flash Memory Fab Located In Japan. It Is Defined As New Method Involves Artificial Intelligence To Boost Productivity.
What Can be Explored with the 3D NAND Flash Memory Market Study
Gain Market Understanding
Identify Growth Opportunities
Analyze and Measure the Global 3D NAND Flash Memory Market by Identifying Investment across various Industry Verticals
Understand the Trends that will drive Future Changes in 3D NAND Flash Memory
Understand the Competitive Scenario
- Track Right Markets
- Identify the Right Verticals
Research Methodology:
The top-down and bottom-up approaches are used to estimate and validate the size of the Global 3D NAND Flash Memory market.
In order to reach an exhaustive list of functional and relevant players various industry classification standards are closely followed such as NAICS, ICB, SIC to penetrate deep in important geographies by players and a thorough validation test is conducted to reach most relevant players for survey in 3D NAND Flash Memory market.
In order to make priority list sorting is done based on revenue generated based on latest reporting with the help of paid databases such as Factiva, Bloomberg etc.
Finally the questionnaire is set and specifically designed to address all the necessities for primary data collection after getting prior appointment by targeting key target audience that includes Venture Capitalists and Private Equity Firms, New Entrants/Investors, Analysts and Strategic Business Planners, 3D NAND Flash Memory Manufacturers, Suppliers and Distributors, Government Regulatory and Research Organizations and End-Use Industries.
This helps us to gather the data related to players revenue, operating cycle and expense, profit along with product or service growth etc.
Almost 70-80% of data is collected through primary medium and further validation is done through various secondary sources that includes Regulators, World Bank, Association, Company Website, SEC filings, OTC BB, USPTO, EPO, Annual reports, press releases etc.