What is IGBTMarket?
IGBT stands for insulated-gate bipolar transistor it is a power transistor that combines an input MOS and an output bipolar transistor. It integrates MOSFET technology with the external performance of the bipolar transistors. These insulated gate bipolar transistors have number of advantages over the conventional MOSFET such as greater power generation. IGBT is widely used for industrial applications such as inverter systems and uninterruptible power supplies (UPS), consumer applications such as air conditioners and induction cookers, and automotive applications such as electric vehicle (EV) motor controllers. The IGBT market can maintain its strong growth trajectory and play a crucial role in advancing various sectors, from clean energy to smart cities and beyond.
IGBT Market Report Coverage
Report Coverage | Details |
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Study Timeframe | 2018 to 2030 |
Base Year | 2023 |
Growth Drivers | - Increasing Adoption in Renewable Energy Production
- Growing applications in the automotive industry
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Challenges & Pitfalls | - Lack of skilled professionals
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Opportunities
Developing Modules & Packaging of IGBT and Integrating sensors and communication capabilities into IGBT modules
Restraints
- Fluctuations in raw material prices
The Manufacturers Covered in the Study are:
Mitsubishi Electric (Japan), Infineon Technologies (Germany), Fuji Electric (Japan), SEMIKRON (Germany), Hitachi (Japan), ABB (Switzerland), ON Semiconductor (Fairchild Semiconductor) (United States), Renesas Electronics (Japan), CRRC (China) and Toshiba Corporation (Japan)
Available Customization:
A list of players that can be included in the study on an immediate basis are STMicroelectronics (Switzerland), ROHM Semiconductor (Japan), Star Power Semiconductor (China), Danfoss (Denmark) and C&H Technology, Inc. (United States).
Market Development Activities
In November 2023, MINEBEA MITSUMI Inc., has announced the acquisition of Hitachi Power Semiconductor Device, Ltd. This strategic move positions MINEBEA MITSUMI as a major player in the power semiconductor market, with significant implications for the industry. The acquisition of Hitachi Power Semiconductor Device by MINEBEA MITSUMI is a significant development in the power semiconductor industry. It has the potential to reshape the competitive landscape and drive innovation in this critical sector.
In March 2023, Toshiba Electronics Europe GmbH has launched a new device GT30J65MRB IGBT intended for use within power factor correction (PFC) circuits within air conditioners, home appliances, and power supplies for industrial equipment, and many other use cases. The new GT30J65MRB is a 60A-rated N-channel IGBT device housed in a TO-3P(N) package and based upon Toshiba’s latest generation technology with an optimized internal trench structure. This significantly enhances switching losses which are typically 0.35mJ