RF GaN Technology Market Scope
Gallium nitride (GaN) is a semiconductor with a narrow bandgap (binary III-V direct) that is commonly utilized in light-emitting diodes. It features a 3.4 electron volt broad bandgap (eV). GaN has a lot of electron mobility, a lot of breakdown voltages, and a lot of saturation velocity. It's perfect for high-temperature, high-power microwave applications like power grid high-voltage switching devices and microwave RF power amplifiers. GaN technology has a number of benefits, including a higher operating temperature, greater operating voltage, higher power density, crack-resistant, and durable material. One of the primary factors driving demand in this market is the growing use of RF GaN in electric vehicles. GaN RF technology is becoming the preferred choice for network service providers due to its capacity to provide higher frequency data bandwidth connections. These devices ensure that the device generates the highest possible frequency in the required band while also preventing interference from other frequency bands.With the deployment of GaN RF power devices, advanced mobile devices will be able to deliver speeds that will allow customers to upload and download high-quality content such as music and images, as well as play online games and watch online TV shows on a regular basis.
The RF GaN Technology market study is segmented by Type (Opto-semiconductors, Power Semiconductors and RF Semiconductors), by Application (Lighting and Lasers, Supplies and Inverters, Radio Frequency and Power Drives) and major geographies with country level break-up.
Research Analyst at AMA estimates that United States Players will contribute to the maximum growth of Global RF GaN Technology market throughout the predicted period.
Cree (United States), Qorvo (United States), Infineon Technologies (Germany), GaN Systems (Canada), MACOM (United States), Mitsubishi Electric Corporation (Japan), NXP Semiconductors NV (Netherlands), Qorvo Inc. (United States), Raytheon Technologies (United States) and Mercury Systems, Inc (United States) are some of the key players that are part of study coverage.
About Approach
The research aims to propose a patent-based approach in searching for potential technology partners as a supporting tool for enabling open innovation. The study also proposes a systematic searching process of technology partners as a
preliminary step to select the emerging and key players that are involved in implementing market estimations. While patent analysis is employed to overcome the aforementioned data- and process-related limitations, as expenses occurred in that technology allows us to estimate the market size by evolving segments as target market from total available market.
Segmentation Overview
AMA Research has segmented the market of Global RF GaN Technology market by Type, Application and Region.
On the basis of geography, the market of RF GaN Technology has been segmented into South America (Brazil, Argentina, Chile, Rest of South America), Asia Pacific (China, Japan, India, South Korea, Singapore, Indonesia, Thailand, Australia, Rest of Asia-Pacific), Europe (Germany, France, Italy, United Kingdom, Netherlands, Spain, Sweden, Belgium, Finland, Denmark, Russia, Rest of Europe), MEA (Middle East, Africa), North America (United States, Canada, Mexico).
August 2020 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, has announced a new reference design for a high power density 65W QR (quasi-resonant) charger targeted for the consumer electronics market, including mobile phone and laptop computer applications. and March 2021 – Cree | Wolfspeedintroduces four new multi-stage GaN on SiC monolithic microwave integrated circuit (MMIC) devices, extending its range of RF solutions for a diverse array of pulsed and continuous-wave X-band phased array applications, including marine, weather surveillance and emerging unmanned aerial system radars.
Market Trend
- Applications in Electric and Hybrid Electric Vehicles
- Increasing Adoption of GaN RF Semiconductor Devices for Military, Defense, and Aerospace Applications
Market Drivers
- Growing Demand from Consumer and Enterprises and Automotive Verticals For power Electronic Devices
- Continuous Emergence of Technologies in GaNEcosystem
Opportunities
- Potential Use of GaN in 5G Infrastructure Development
- Rise in Demand for Data Centers, Laptops, and Tablets
Restraints
- Higher Efficacy of Alternative Such as Silicon Carbide for High-Voltage Semiconductor Applications
Challenges
- High Material and Fabrication Costs
- Complexities Associated with Designing of Electrical Layout of GaNDevices
Key Target Audience
Technology Provider, Software Provider, IT Companies, Investors and End Users