About High Electron Mobility Transistor
The HEMT or High Electron Mobility Transistor is an innovative transistor structure which uses potential well as a channel for electron conduction. It is an essential device for high speed, high frequency, digital circuits and microwave circuits with low noise applications. These applications consist of computing, telecommunications, and instrumentation. Further, the device is also used in RF design, where high performance is required at very high RF frequencies. Rising Demand for transistors from energy & power, Inverter & UPS and other industries are fuelling the market growth
Attributes | Details |
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Study Period | 2018-2030 |
Base Year | 2023 |
Unit | Value (USD Million) |
CAGR | 7.8% |
The HEMT market is expected to see continued growth driven by technological advancements and new applications. Companies that can excel in areas like R&D, product diversification, and cost optimization will be well-positioned to succeed in this competitive landscape. Analyst at AMA Research estimates that United States and Japanese Players will contribute the maximum growth to Global High Electron Mobility Transistor market throughout the forecasted period. Established and emerging Players should take a closer view at their existing organizations and reinvent traditional business and operating models to adapt to the future.
Fujitsu (Japan), Mitsubishi Electric (Japan), Ampleon (Netherlands), Qorvo (United States), Oki Electric (Japan), Lake Shore Cryotronics (United States), Cree (United States), TOSHIBA (Japan) and Microsemi (United States) are some of the key players that are part of study coverage. Additionally, the Players which are also part of the research coverage are NXP Semiconductors (United States), ON Semiconductor (United States) and STMicroelectronics (Switzerland).
Segmentation Overview
AMA Research has segmented the market of Global High Electron Mobility Transistor market by Type (GaN, GaN/SiC and GaAs), Application (Energy & Power, Consumer Electronics, Inverter & UPS and Industrial) and Region.
On the basis of Type, GaN are dominating the market in the year 2023 where as GaN/SiC stood as second largest market share.
On the basis of application, Consumer Electronics segment is dominating the market in the year 2023 where as Inverter & UPS segment stood as second largest market .On the basis of geography, the market of High Electron Mobility Transistor has been segmented into South America (Brazil, Argentina, Rest of South America), Asia Pacific (China, Japan, India, South Korea, Taiwan, Australia, Rest of Asia-Pacific), Europe (Germany, France, Italy, United Kingdom, Netherlands, Rest of Europe), MEA (Middle East, Africa), North America (United States, Canada, Mexico). North America region held largest market share in the year 2023. Asia Pacific, on the other hand, stood as the second largest market due to the presence of key companies in the region and high technological advancement. If we see Market by Electrical Behavior, the sub-segment i.e. EHEMT will boost the High Electron Mobility Transistor market. Additionally, the rising demand from SMEs and various industry verticals gives enough cushion to market growth.
Influencing Trend:
Rising Demand for electronic devices in various industries and Increasing investments in R&D activities
Market Growth Drivers:
Superior performance & functionalities and Increasing demand from end use industries
Challenges:
Availability of substitutes in the market
Restraints:
High level of new entrants
Opportunities:
Business opportunity in developed economies
Market Leaders and their expansionary development strategies
In September 2022, Taiwan's Industrial Technology Research Institute (ITRI) collaborated with Oxford Instruments to unveil a new GaN HEMT architecture called GaN MISHEMT. This advancement promises to benefit critical high-growth sectors like electric vehicles, data centers, and 5G technology.
In August 2023, ROHM Co. Ltd., a power semiconductor manufacturer, introduced EcoGaN power-stage ICs named BM3G0xxMUV-LB series with gate driver & built-in 650V gallium nitride (GaN) HEMT.
Key Target Audience
Manufacturers of High Electron Mobility Transistors (HEMT), Distributors/Traders/Wholesalers of High Electron Mobility Transistors (HEMT), Manufacturers of High Electron Mobility Transistors (HEMT) Subcomponent, Semiconductor industry, Industry Association and Downstream Vendor
About Approach
To evaluate and validate the market size various sources including primary and secondary analysis is utilized. AMA Research follows regulatory standards such as NAICS/SIC/ICB/TRCB, to have a better understanding of the market. The market study is conducted on basis of more than 200 companies dealing in the market regional as well as global areas with the purpose to understand the companies positioning regarding the market value, volume, and their market share for regional as well as global.
Further to bring relevance specific to any niche market we set and apply a number of criteria like Geographic Footprints, Regional Segments of Revenue, Operational Centres, etc. The next step is to finalize a team (In-House + Data Agencies) who then starts collecting C & D level executives and profiles, Industry experts, Opinion leaders, etc., and work towards appointment generation.
The primary research is performed by taking the interviews of executives of various companies dealing in the market as well as using the survey reports, research institute, and latest research reports. Meanwhile, the analyst team keeps preparing a set of questionnaires, and after getting the appointee list; the target audience is then tapped and segregated with various mediums and channels that are feasible for making connections that including email communication, telephonic, skype, LinkedIn Group & InMail, Community Forums, Community Forums, open Survey, SurveyMonkey, etc.